San Jose, CA, United States of America

Jian-Hung Lee

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Marvell International Limited. Active years: 2014.

USPTO Granted Patents = 1 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: The Innovations of Jian-Hung Lee

Introduction

Jian-Hung Lee is a prominent inventor based in San Jose, California. He has made significant contributions to the field of semiconductor technology. His work has led to the development of innovative devices that enhance electronic performance.

Latest Patents

One of Jian-Hung Lee's notable patents is for a Laterally Diffused Metal Oxide Semiconductor (LDMOS) device with overlapping wells. This invention includes a transistor comprising a p-type well and an n-type well, where at least a part of one well overlaps with another. This design improves the efficiency and functionality of semiconductor devices.

Career Highlights

Jian-Hung Lee is currently employed at Marvell International Limited, a company known for its cutting-edge technology in the semiconductor industry. His expertise in semiconductor design has been instrumental in advancing the company's product offerings.

Collaborations

Throughout his career, Jian-Hung Lee has collaborated with talented individuals such as Xin Yi Zhang and Weidan Li. These partnerships have fostered innovation and contributed to the success of their projects.

Conclusion

Jian-Hung Lee's contributions to semiconductor technology exemplify the impact of innovative thinking in the industry. His patent for the LDMOS device showcases his commitment to advancing electronic performance. His work continues to influence the field and inspire future innovations.

Profile summary based on public USPTO records.
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