Hong Kong, China

Jian Feng

This inventor holds 4 USPTO granted patents. Top assignee: Hong Kong Applied Science and Technology Research Institute. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jian Feng. Retrieved from https://idiyas.com/inventor/jian-feng-cq20kd8h

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 3

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 2010

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4 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Jian Feng

Introduction

Jian Feng is a prominent inventor based in Hong Kong, CN. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on developing advanced light-emitting diode (LED) devices and semiconductor materials that enhance efficiency and functionality.

Latest Patents

One of Jian Feng's latest patents is for a light-emitting diode device, which features a light-emitting region that occupies a plane substantially perpendicular to the surface on which the device is mounted. This innovative design allows the primary light emission directions to be parallel to the mounting surface. Additionally, the device incorporates both p-type and n-type semiconductor layers that are passivated by light transmissive materials. The patent also outlines a method for fabricating and mounting such devices, which can be utilized in a lighting assembly to provide independently controllable lit regions.

Another notable patent involves a semiconductor device that includes a current spreading layer situated between the semiconductor material and an electrode. This layer consists of multiple sub-layers of a first conductive material, with patterned regions of a second conductive material interspersed to effectively spread electrical current. The second material is designed to have lower ohmic resistance than the first, enhancing the overall performance of the semiconductor device.

Career Highlights

Jian Feng is currently employed at the Hong Kong Applied Science and Technology Research Institute. His work at this esteemed institution has allowed him to focus on cutting-edge research and development in semiconductor technologies. His innovative approaches have contributed to advancements in the field, making him a respected figure among his peers.

Collaborations

Jian Feng has collaborated with several notable colleagues, including Shengmei Zheng and Hung-Shen Chu. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Jian Feng's contributions to the field of semiconductor technology and his innovative patents demonstrate his commitment to advancing the industry. His work continues to influence the development of efficient lighting solutions and semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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