This inventor holds 2 USPTO granted patents and 1 EPO patent. Top assignee: Other. Active years: 2016-2017.
Company Filing History:
2 out of 834,411 Years Active: 2016-2017
Title: Jiajin Liang - Innovator in Power Semiconductor Technology
Introduction
Jiajin Liang is a notable inventor based in Hong Kong, CN. He has made significant contributions to the field of power semiconductor technology, holding a total of 2 patents. His work focuses on enhancing the efficiency and performance of power field effect transistors.
Latest Patents
One of Jiajin Liang's latest patents is the "Split gate power semiconductor field effect transistor." This invention relates to the structure and manufacturing of a power field effect transistor (FET). It provides a planar power metal oxide semiconductor field effect transistor (MOSFET) structure and an insulated gate bipolar transistor (IGBT) structure that includes a split gate and a semi-insulating field plate. The patent also outlines manufacturing methods for these advanced structures.
Career Highlights
Throughout his career, Jiajin Liang has worked with various companies, including Zhong Shan Honson Electronic Technologies Limited. His expertise in semiconductor technology has positioned him as a valuable asset in the industry.
Collaborations
Jiajin Liang has collaborated with several professionals in his field, including Chun Wai Ng and Johnny Kin On Sin. These collaborations have contributed to the advancement of his innovative projects.
Conclusion
Jiajin Liang's contributions to power semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the industry. His work continues to influence advancements in semiconductor design and manufacturing.