Jiajia Sun

Title: Jiajia Sun and SiC MOSFET Radiation Testing

Introduction

Jiajia Sun is an inventor based in Beijing, China, whose patent work concerns testing the radiation response of silicon carbide (SiC) MOSFET devices. The supplied information lists one patent associated with Sun and identifies the China Academy of Space Technology as her company.

Latest Patents

Sun’s listed patent, “Method for Testing Total Dose Effect of SiC MOSFET Device,” describes a procedure for evaluating how total-dose radiation affects a SiC MOSFET. The method proceeds through device testing before irradiation, pre-irradiation annealing, irradiation, post-irradiation annealing, and analysis of the resulting test data.

The procedure distinguishes threshold-voltage shifts caused by radiation-induced defects from shifts associated with near-interface trap charges inherent to the SiC MOSFET interface. By analyzing and calculating the results, the method assesses the device’s resistance to total-dose effects and can help guide device hardening. The supplied data lists 1 patent for Sun.

Career Highlights

Sun’s listed invention addresses a testing challenge relevant to evaluating SiC MOSFET reliability under radiation exposure. The supplied information associates her work with the China Academy of Space Technology.

Collaborations

The supplied data names Qingkui Yu and He Wang as Sun’s coworkers. It does not specify their roles in the patent or describe particular collaborative contributions.

Conclusion

Jiajia Sun’s listed patent presents a structured approach to measuring and analyzing total-dose radiation effects in SiC MOSFET devices, with potential value for assessing device resilience and informing hardening efforts.