Company Filing History:
Years Active: 2014-2016
Title: Innovations of Jiafeng Zhu in SRAM Memory Technology
Introduction
Jiafeng Zhu is a notable inventor based in Jiangsu, China, recognized for his contributions to the field of memory technology. With a total of two patents to his name, Zhu has made significant advancements in enhancing the robustness of sub-threshold SRAM memory cells.
Latest Patents
One of his latest patents is titled "Circuit for enhancing robustness of sub-threshold SRAM memory cell." This invention serves as an auxiliary circuit designed to improve the process robustness of sub-threshold SRAM memory cells. The circuit connects to PMOS transistors of the memory cell and includes a detection circuit for threshold voltages, along with a differential input and single-ended output amplifier. By adapting the substrate voltage of the PMOS transistors based on detected threshold voltage fluctuations, the circuit enhances the noise margin and overall robustness of the memory cells.
Another significant patent is the "Noise current compensation circuit." This circuit features two input and output terminals, along with control terminals that manage its work mode. Comprising seven PMOS transistors and eight NMOS transistors, the circuit automatically adjusts the discharge rates of signals in response to potential changes, effectively mitigating the impact of noise currents. This innovation is particularly useful for SRAM bit line leakage current compensation, ensuring accurate signal identification in subsequent circuits.
Career Highlights
Jiafeng Zhu is affiliated with Southeast University, where he continues to engage in research and development in memory technology. His work has garnered attention for its practical applications in improving memory cell performance.
Collaborations
Zhu collaborates with esteemed colleagues, including Na Bai and Longxing Shi, contributing to a dynamic research environment that fosters innovation.
Conclusion
Jiafeng Zhu's innovative patents in SRAM memory technology demonstrate his commitment to advancing the field. His work not only enhances the performance of memory cells but also addresses critical challenges in the industry.