Jia-Ming Kuo

Title: Jia-Ming Kuo: Innovator in Semiconductor Technology

Introduction

Jia-Ming Kuo is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs in transistor devices. His work has garnered attention for its potential applications in various electronic devices.

Latest Patents

Jia-Ming Kuo holds a patent for a double-gate trench-type insulated-gate bipolar transistor device. This invention discloses a unique design that includes a first trench and a second trench located in a P-type doped well layer. These trenches are separated from each other and extend into a lightly-doped N-type drift layer. The device features a heavily-doped P-type source region and a heavily-doped N-type source region, which are sequentially connected and positioned between the two trenches. This innovative configuration enhances the performance and efficiency of the transistor device.

Career Highlights

Kuo is currently associated with Huge Power Limited Taiwan Branch, where he continues to develop cutting-edge technologies in the semiconductor industry. His expertise in designing advanced transistor devices has positioned him as a key player in his field.

Collaborations

Jia-Ming Kuo has collaborated with notable colleagues, including Chung-Wei Yu and Kuo-Lun Huang. These partnerships have contributed to the advancement of innovative technologies within their organization.

Conclusion

Jia-Ming Kuo's contributions to semiconductor technology, particularly through his patented inventions, highlight his role as an influential inventor in the industry. His work continues to pave the way for advancements in electronic devices.