New Hill, NC, United States of America

Jia Guo

This inventor holds 1 USPTO granted patent. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jia Guo. Retrieved from https://idiyas.com/inventor/jia-guo-istjm8rq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jia Guo - Innovator in Semiconductor Technology

Introduction

Jia Guo is a notable inventor based in New Hill, NC (US). He has made significant contributions to the field of semiconductor technology. His innovative work focuses on enhancing the performance of transistor devices.

Latest Patents

Jia Guo holds a patent for "Field peak reduction in semiconductor devices with metal corner rounding." This patent describes transistor devices that incorporate metal structures with rounded corners. In one example, the transistor device features a Group III-nitride semiconductor structure. The design includes a gate contact and/or a field plate on the semiconductor structure. Notably, one or more of these components have at least one rounded corner, which contributes to improved device performance.

Career Highlights

Throughout his career, Jia Guo has demonstrated a commitment to advancing semiconductor technology. His innovative approaches have led to practical applications in various electronic devices. His work is recognized for its potential to enhance efficiency and reliability in semiconductor applications.

Collaborations

Jia Guo has collaborated with Olof Tornblad, contributing to the development of advanced semiconductor technologies. Their partnership has fostered innovation and has led to significant advancements in the field.

Conclusion

Jia Guo's contributions to semiconductor technology, particularly through his patented innovations, highlight his role as a key inventor in this field. His work continues to influence the development of more efficient electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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