Introduction: Ji-young Kim is a prominent inventor based in Kyungki-do, South Korea. With a remarkable portfolio of 13 patents, she has significantly impacted the field of semiconductor technology, particularly through her innovative designs and methodologies.

Latest Patents: Among her most recent inventions is a method for fabricating a MOSFET with a recessed channel. The technology involves a semiconductor substrate where the critical dimension (CD) of a recessed trench defining the channel surpasses that of the gate electrode placed on the substrate. This advancement enhances the misalignment margin in photolithographic processes, leading to reduced overlap capacitance and minimized gate induced drain leakage (GIDL), thereby increasing overall device performance.

Career Highlights: Ji-young Kim works at Samsung Electronics Co., Ltd., a leading global technology company renowned for its pioneering innovations. Her expertise has been instrumental in advancing semiconductor designs that cater to modern electronic needs.

Collaborations: Throughout her career, she has collaborated with esteemed colleagues, including Ki-nam Kim and Jong-Shin Shin. These partnerships have fostered a creative environment that encourages the exchange of pioneering ideas in technological advancements.

Conclusion: Ji-young Kim exemplifies the spirit of innovation in the semiconductor industry. Her contributions, through her numerous patents and collaborative efforts, continue to shape the future of technology, making her a key figure worth recognizing in the world of inventions.

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