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For the Inventor, By the Inventor

Kyungki-do, South Korea

Ji-young Kim

This inventor holds 13 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2005-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ji-young Kim. Retrieved from https://idiyas.com/inventor/ji-young-kim-izac4cyv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 13

% Patents Active = 76.9

Average Co-Inventor Count = 1.4

ph-index = 5

Forward Citations = 40(Granted Patents)


Location History:

  • Osan-si, KR (2009)
  • Kyungki-do, KR (2005 - 2011)

Company Filing History:

goldMedal13 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2005-2011

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13 patents (USPTO):Explore Patents
1. 7994572 - MOSFET having recessed channel (2011-08-09),
2. 7777273 - MOSFET having recessed channel (2010-08-17),
3. 7558311 - Spread spectrum clock generator and method for generating a spread spectrum clock signal (2009-07-07),
4. 7555094 - Counter capable of holding and outputting a count value and phase locked loop having the counter (2009-06-30),
5. 7482210 - Method of fabricating semiconductor device having junction isolation insulating layer (2009-01-27),
6. 7282405 - Semiconductor memory device and method for manufacturing the same (2007-10-16),
7. 7250342 - Method of fabricating a MOSFET having a recessed channel (2007-07-31),
8. 7220648 - Methods of forming integrated circuit devices including raised source/drain structures having different heights (2007-05-22),
9. 7091072 - Semiconductor device and method for manufacturing the same (2006-08-15),
10. 7057242 - Transistor structures having access gates with narrowed central portions (2006-06-06),
11. 7057238 - Semiconductor device and method for fabricating the same (2006-06-06),
12. 6967382 - Integrated circuit devices including raised source/drain structures having different heights (2005-11-22),
13. 6903404 - Semiconductor memory device and method for manufacturing the same (2005-06-07),

Title: Innovator Spotlight: Ji-young Kim and Her Contributions to Semiconductor Technology

Introduction: Ji-young Kim is a prominent inventor based in Kyungki-do, South Korea. With a remarkable portfolio of 13 patents, she has significantly impacted the field of semiconductor technology, particularly through her innovative designs and methodologies.

Latest Patents: Among her most recent inventions is a method for fabricating a MOSFET with a recessed channel. The technology involves a semiconductor substrate where the critical dimension (CD) of a recessed trench defining the channel surpasses that of the gate electrode placed on the substrate. This advancement enhances the misalignment margin in photolithographic processes, leading to reduced overlap capacitance and minimized gate induced drain leakage (GIDL), thereby increasing overall device performance.

Career Highlights: Ji-young Kim works at Samsung Electronics Co., Ltd., a leading global technology company renowned for its pioneering innovations. Her expertise has been instrumental in advancing semiconductor designs that cater to modern electronic needs.

Collaborations: Throughout her career, she has collaborated with esteemed colleagues, including Ki-nam Kim and Jong-Shin Shin. These partnerships have fostered a creative environment that encourages the exchange of pioneering ideas in technological advancements.

Conclusion: Ji-young Kim exemplifies the spirit of innovation in the semiconductor industry. Her contributions, through her numerous patents and collaborative efforts, continue to shape the future of technology, making her a key figure worth recognizing in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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