This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignee: Korea Advanced Institute of Science and Technology. Active years: 2025-2026.
Company Filing History:
Years Active: 2025-2026
Title: Innovations by Ji-Sang An in Dielectric Materials
Introduction
Ji-Sang An is a notable inventor based in Daejeon, South Korea. He has made significant contributions to the field of dielectric materials, which are essential in various electronic devices. His innovative work has led to the development of a unique dielectric material that enhances device performance.
Latest Patents
Ji-Sang An holds a patent for a dielectric material, a device including the same, and a method of preparing the dielectric material. The patent describes a dielectric material that consists of a polycrystalline oxide featuring multiple crystal grain bulks and grain boundaries. Notably, the polycrystalline oxide incorporates an indium dopant within the grain boundaries, which contributes to its enhanced properties.
Career Highlights
Ji-Sang An is affiliated with the Korea Advanced Institute of Science and Technology, where he conducts research and development in advanced materials. His work focuses on improving the efficiency and effectiveness of dielectric materials used in various applications.
Conclusion
Ji-Sang An's contributions to the field of dielectric materials demonstrate his innovative spirit and commitment to advancing technology. His patent reflects a significant step forward in material science, showcasing the potential for improved electronic devices.