Suwon-si, South Korea

Ji Mo Gu

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ji Mo Gu. Retrieved from https://idiyas.com/inventor/ji-mo-gu-n8dw8lh7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ji Mo Gu: Semiconductor Device Inventor

Introduction

Ji Mo Gu is an inventor based in Suwon-si, South Korea, and is associated with Samsung Electronics Ltd. His patent work concerns semiconductor devices and electronic systems.

Latest Patents

Gu is credited with 1 patent: “Semiconductor Device and Electronic System Including the Same.” The invention describes a semiconductor device with first and second substrates connected to each other. The second substrate includes a plate layer with gate electrode layers, channel structures, and spaced-apart word-line cutting structures on one face. Via structures and via connecting structures are arranged on the opposite face. The patent specifies differing widths between the bottom and top faces of these structures.

Career Highlights

Gu’s listed patent reflects work on semiconductor-device architecture, including substrate connections and the arrangement of gate, channel, and via structures. His company affiliation is Samsung Electronics Ltd.

Collaborations

Ah Reum Lee is identified as Gu’s coworker. The available information does not specify their collaboration on a particular patent or project.

Conclusion

Ji Mo Gu’s recorded invention focuses on structural features of semiconductor devices and electronic systems, highlighting his contribution to patent activity in the semiconductor field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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