Cheongju-si, South Korea

Ji Hyun Nam

USPTO Granted Patents = 4 

 

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2021-2023

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4 patents (USPTO):Explore Patents

Title: Ji Hyun Nam: Innovator in Lithium Battery Technology

Introduction

Ji Hyun Nam is a prominent inventor based in Cheongju-si, South Korea. He has made significant contributions to the field of lithium secondary batteries, holding a total of 4 patents. His work focuses on enhancing the performance and stability of battery materials, which is crucial for the advancement of energy storage technologies.

Latest Patents

One of Ji Hyun Nam's latest patents involves a cathode active material for lithium secondary batteries. This invention includes a core portion and a shell portion surrounding the core portion. The total content of cobalt in both portions is maintained between 5 to 12 mol %. By adjusting the cobalt content within a predetermined range, the optimal capacity of the lithium secondary battery can be increased. Additionally, this innovation enhances the life characteristics of the battery by improving its stability.

Career Highlights

Ji Hyun Nam is currently associated with Ecopro BM Co., Ltd., where he continues to develop cutting-edge technologies in battery materials. His expertise in this area has positioned him as a key player in the industry, contributing to advancements that support the growing demand for efficient energy storage solutions.

Collaborations

Ji Hyun Nam collaborates with notable colleagues, including Jung Han Lee and Moon Ho Choi. Their combined efforts in research and development have led to significant innovations in the field of lithium batteries.

Conclusion

Ji Hyun Nam's work in lithium secondary battery technology exemplifies the importance of innovation in energy storage. His patents and collaborations reflect a commitment to enhancing battery performance and stability, which are essential for future advancements in this critical field.

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