Yongin-si, South Korea

Ji Hyun Ko

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Display Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ji Hyun Ko. Retrieved from https://idiyas.com/inventor/ji-hyun-ko-ds7bmoam

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ji Hyun Ko: Innovator in Glass Stress Testing

Introduction

Ji Hyun Ko is a notable inventor based in Yongin-si, South Korea. He has made significant contributions to the field of material science, particularly in the testing of glass stress. His innovative approach has led to the development of a unique method for analyzing glass breakage.

Latest Patents

Ji Hyun Ko holds 1 patent for his invention titled "Test method for glass stress." This method involves breaking a glass and analyzing the shape of the crack in a plan view. By identifying the breakage origin based on the crack's shape, he is able to conduct a cross-sectional analysis of the breakage origin. The stress of the glass is then calculated as a value proportional to a floor constant defined by the condition of the floor surface at the time of breakage.

Career Highlights

Ji Hyun Ko is currently employed at Samsung Display Co., Ltd., where he continues to innovate in the field of glass technology. His work has implications for various applications, including consumer electronics and architectural design.

Collaborations

One of his notable coworkers is Yong Kyu Kang, with whom he collaborates on various projects related to glass stress testing.

Conclusion

Ji Hyun Ko's contributions to glass stress testing exemplify the importance of innovation in material science. His patented method not only enhances our understanding of glass behavior but also paves the way for advancements in related industries.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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