IDiyas

For the Inventor, By the Inventor

Seongnam-si, South Korea

Ji-Hyun In

USPTO Granted Patents = 11

Average Co-Inventor Count = 4.8

ph-index = 4

Forward Citations = 109(Granted Patents)


Location History:

  • Seongnam-si, KR (2005 - 2015)
  • Seongnam, KR (2017)

Company Filing History:

goldMedal11 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2005-2017

Loading Chart...
11 patents (USPTO):
1. RE46404 - Flash memory management method (2017-05-15),
2. RE45577 - Method of writing to a flash memory including data blocks and log blocks (2015-06-22),
3. RE45222 - Method of writing of writing to a flash memory including data blocks and log blocks, using a logical address having a block address portion and page identifying portion, a block address table and a page table (2014-10-27),
4. 7971022 - Apparatus and method of processing data of non-volatile memory using transaction block (2011-06-28),
5. 7702844 - Address mapping method and mapping information managing method for flash memory, and flash memory using the same (2010-04-20),
6. 7526600 - Data management device and method for flash memory (2009-04-28),
7. 7519764 - Apparatus and method for detecting data validity in flash memory (2009-04-14),
8. 7516295 - Method of remapping flash memory (2009-04-07),
9. 7430632 - Data management apparatus and method for determining a response time in flash memory devices (2008-09-30),
10. 7421624 - Data recovery apparatus and method used for flash memory (2008-09-02),
11. 6938116 - Flash memory management method (2005-08-30),

Title: **Innovator Spotlight: Ji-Hyun In**

Introduction: Ji-Hyun In, a notable inventor based in Seongnam-si, South Korea, has made significant contributions to the field of flash memory technology. With a total of 11 patents to his name, he continues to push the boundaries of innovation within his role at Samsung Electronics Co., Ltd.

Latest Patents: Among Ji-Hyun's most recent patents are advancements in flash memory management methods. One of his notable patents describes a flash memory management method where, upon receiving a request to write predetermined data to a previously written page, the data is redirected to a log block corresponding to the original data block. This method also allows subsequent write requests to be processed efficiently, optimizing the use of flash memory resources by storing data in an empty page within the log block instead of the original page.

Career Highlights: Ji-Hyun In's career at Samsung Electronics Co., Ltd. showcases his commitment to innovation in flash memory management. His work on improving the efficiency and resource utilization of flash memory systems has greatly benefited the technology industry, ensuring layers of reliability and speed in data processing.

Collaborations: Throughout his career, Ji-Hyun has collaborated with esteemed colleagues such as Kwang-yoon Lee and Tae-sun Chung. These partnerships have fostered an environment of creativity and have led to numerous advancements in flash memory technology. Their combined expertise has been pivotal in enhancing the capabilities of Samsung's products.

Conclusion: Ji-Hyun In’s impressive portfolio and dedication to innovation mark him as a significant inventor in the technology sector. His groundbreaking work in flash memory management not only enhances device performance but also paves the way for future advancements in data storage solutions. As technology continues to evolve, Ji-Hyun's contributions will remain paramount in shaping the future of memory management.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…