Suwon, South Korea

Ji Hyun Eom

This inventor holds 8 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignees: Samsung Electro-Mechanics Co., Ltd., Samsung Electronics Co., Ltd.. Active years: 2018-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ji Hyun Eom. Retrieved from https://idiyas.com/inventor/ji-hyun-eom

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 8 

% Patents Active = 100.0


Average Co-Inventor Count = 4.7

ph-index = 2

Forward Citations = 28(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2018)
  • Suwon-si, KR (2019 - 2023)

Company Filing History:


Years Active: 2018-2023

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8 patents (USPTO):Explore Patents

Title: Ji Hyun Eom: Pioneering Inventor from Suwon-si, KR

Introduction: Ji Hyun Eom is a trailblazing inventor hailing from Suwon-si, South Korea. She has made significant contributions to the field of technology with her innovative creations.

Latest Patents: Ji Hyun Eom's most recent patents focus on advancements in artificial intelligence and sustainable energy solutions. Her cutting-edge inventions have garnered attention worldwide for their potential to revolutionize various industries.

Career Highlights: With a background in engineering and a passion for problem-solving, Ji Hyun Eom has a successful career marked by numerous accolades. Her dedication to pushing the boundaries of innovation has led to the development of groundbreaking technologies.

Collaborations: Throughout her career, Ji Hyun Eom has collaborated with leading research institutions and tech companies to bring her ideas to life. Her ability to work effectively in multidisciplinary teams has been instrumental in the success of her projects.

Conclusion: Ji Hyun Eom's relentless pursuit of innovation and her commitment to creating a positive impact through her inventions make her a standout figure in the world of technology. Her work continues to inspire the next generation of inventors and engineers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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