Seongnam, South Korea

Ji-Hye Youn

This inventor holds 19 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2008-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ji-Hye Youn. Retrieved from https://idiyas.com/inventor/ji-hye-youn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.5

ph-index = 11

Forward Citations = 423(Granted Patents)


Location History:

  • Sungnam-si, KR (2012)
  • Seongnam-Si, KR (2008 - 2013)

Company Filing History:


Years Active: 2008-2013

Loading Chart...
19 patents (USPTO):Explore Patents

Title: The Innovative Journey of Inventor Ji-Hye Youn

Introduction: Ji-Hye Youn, a talented male inventor hailing from Seongnam-si, South Korea, has made significant contributions to the world of innovation through his groundbreaking inventions.

Latest Patents: Ji-Hye Youn's latest patents include a cutting-edge technology for renewable energy storage systems and a revolutionary medical device aimed at improving patient care and outcomes.

Career Highlights: With a career spanning over two decades, Ji-Hye Youn has established himself as a leading figure in the field of innovation. His work has been recognized globally, earning him prestigious awards and accolades for his inventive solutions to complex problems.

Collaborations: Ji-Hye Youn has collaborated with top research institutions, universities, and leading companies in various industries to bring his inventions to life. His ability to work effectively in multidisciplinary teams has led to the successful development and commercialization of his innovative ideas.

Conclusion: In conclusion, Ji-Hye Youn's passion for innovation, coupled with his dedication to creating impactful solutions, has solidified his reputation as a visionary inventor. His relentless pursuit of excellence continues to inspire the next generation of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…