Seoul, South Korea

Ji Hwan Seo

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Endentics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ji Hwan Seo. Retrieved from https://idiyas.com/inventor/ji-hwan-seo-yiry6uca

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Ji Hwan Seo: Inventor of a Liquid-Filling Method

Introduction

Ji Hwan Seo is an inventor based in Seoul, South Korea. His patent work includes a method and device for filling narrow, closed-end channels with liquid. He is associated with Endentics Co., Ltd. and has 1 patent listed in the information provided.

Latest Patents

Seo’s patent, “Liquid Filling Method, and Device for Implementing the Same Method,” describes filling a narrow channel with a vaporized volatile substance before introducing an injection liquid under pressure. The vapor displaces air from the channel. When pressure is applied, the vapor condenses and changes into a liquid, reducing its volume and allowing the injection liquid to occupy the space it had filled. This approach addresses the challenge of filling narrow channels with closed ends.

Career Highlights

Seo’s listed invention focuses on a practical liquid-filling process and a device for carrying it out. The patent connects vapor displacement and pressure-induced condensation to help fill a confined channel.

Collaborations

Seo is associated with Endentics Co., Ltd. His listed coworkers include Ho Young Kim and Won Jung Kim.

Conclusion

Ji Hwan Seo’s patent presents a method for filling narrow, closed-end channels by combining vapor displacement with pressure-driven condensation, highlighting his contribution to liquid-filling technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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