Company Filing History:
Years Active: 2012
Title: Ji Ho Joo: Innovator in Germanium Epitaxial Thin Film Technology
Introduction
Ji Ho Joo is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the growth of germanium epitaxial thin films. His innovative work has led to advancements that enhance the performance of photodiodes.
Latest Patents
Ji Ho Joo holds a patent for the "Growth of germanium epitaxial thin film with negative photoconductance characteristics and photodiode using the same." This patent describes a method for growing a germanium (Ge) epitaxial thin film that exhibits negative photoconductance characteristics. The process involves growing a germanium thin film on a silicon substrate at low temperatures, followed by a temperature increase to facilitate further growth. The method employs reduced pressure chemical vapor deposition (RPCVD) across three stages, resulting in a germanium thin film with reduced stress on the substrate, lower dislocation density, and improved surface smoothness. Ji Ho Joo has 1 patent to his name.
Career Highlights
Ji Ho Joo is affiliated with the Electronics and Telecommunications Research Institute, where he continues to push the boundaries of semiconductor research. His work has been instrumental in developing technologies that are crucial for modern electronic devices.
Collaborations
Some of his notable coworkers include Sang Hoon Kim and Gyung Ock Kim, who have collaborated with him on various projects within the institute.
Conclusion
Ji Ho Joo's contributions to the field of germanium epitaxial thin films exemplify the innovative spirit of modern inventors. His work not only advances semiconductor technology but also paves the way for future developments in photodiode applications.