The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Aug. 05, 2009
Sang Hoon Kim, Seoul, KR;
Gyung Ock Kim, Seoul, KR;
Dong Woo Suh, Daejeon, KR;
Ji Ho Joo, Gyeonggi-do, KR;
Sang Hoon Kim, Seoul, KR;
Gyung Ock Kim, Seoul, KR;
Dong Woo Suh, Daejeon, KR;
Ji Ho Joo, Gyeonggi-do, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness.