Suwon, South Korea

Ji Heon Oh

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ji Heon Oh. Retrieved from https://idiyas.com/inventor/ji-heon-oh-fvdrsdsw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2016

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Ji Heon Oh: Semiconductor Light-Emitting Device Inventor

Introduction

Ji Heon Oh is an inventor based in Suwon, South Korea, and is associated with Samsung Electronics Co., Ltd. His patent work includes a semiconductor light-emitting device designed with a layered structure of semiconductor materials.

Latest Patents

Oh is named on 1 patent, titled “Semiconductor Light Emitting Device.” The invention describes a device with first and second conductivity-type semiconductor layers surrounding an active layer made of alternating quantum barrier and quantum well layers. The barrier layer nearest the second conductivity-type layer includes undoped and doped regions, each containing unit layers with different energy band gaps and at least one hole accumulation region. The doped region is at least as thick as the undoped region.

Career Highlights

Oh’s listed patent reflects work on semiconductor device structures and the design of active layers for light-emitting applications. His company affiliation is Samsung Electronics Co., Ltd.

Collaborations

Eun Deok Sim and Jae Sung Hyun are identified as Oh’s coworkers. The available information does not specify their roles in the patent or whether they collaborated with him on this invention.

Conclusion

Ji Heon Oh is a Suwon-based inventor associated with Samsung Electronics whose patent concerns the layered semiconductor structure of a light-emitting device.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…