Guangdong, China

Ji He

This inventor holds 1 USPTO granted patent. Top assignee: Shenzhen Bencent Telectronics Co., Ltd.. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ji He. Retrieved from https://idiyas.com/inventor/ji-he-qojz0ejx

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Ji He - Innovator in Gas Discharge Technology

Introduction

Ji He is a notable inventor based in Guangdong, China. He has made significant contributions to the field of gas discharge technology. His innovative approach has led to the development of a unique gas discharge tube that enhances performance and reliability.

Latest Patents

Ji He holds a patent for a gas discharge tube. This invention includes at least two electrodes and an insulating tube body, which is connected in a sealing manner with the electrodes to form a discharge inner cavity. A low-temperature sealing adhesive is arranged in the gas discharge tube, which melts at a specific low temperature to cause gas leakage in the discharge inner cavity. This innovative design improves the functionality of gas discharge tubes in various applications.

Career Highlights

Ji He is currently employed at Shenzhen Bencent Telectronics Co., Ltd. His work at this company has allowed him to focus on advancing technologies related to gas discharge systems. His dedication to innovation has positioned him as a key figure in his field.

Collaborations

Ji He collaborates with talented coworkers, including Meng Fu and Feilong Wang. Their combined expertise fosters a creative environment that drives technological advancements.

Conclusion

Ji He is a prominent inventor whose work in gas discharge technology has made a significant impact. His innovative patent and collaboration with skilled professionals highlight his commitment to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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