This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Massachusetts Institute of Technology. Active years: 2022.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2022
Title: Innovations of Jesus Del Alamo
Introduction
Jesus Del Alamo is a prominent inventor based in Lincoln, MA (US). He is known for his contributions to the field of semiconductor technology, particularly in the development of protonic resistive devices. His work has significant implications for memory elements and processing elements in CMOS-compatible applications.
Latest Patents
Del Alamo holds a patent for "CMOS-compatible protonic resistive devices." This patent describes innovative devices that utilize a proton-sensitive metal oxide channel. The conductivity of these devices can be modulated by controlling the concentration of protons intercalated within the layer. The protons can be supplied through an implantation method, and irradiation techniques can enhance their concentration and conductivity. Some designs allow for direct contact between the active layer and reservoir, resulting in an electrolyte-free device. These designs offer scalable solutions for full-scale silicon integration.
Career Highlights
Del Alamo is affiliated with the Massachusetts Institute of Technology, where he has made significant contributions to research and development in semiconductor technology. His work has been instrumental in advancing the understanding and application of protonic resistive devices.
Collaborations
He has collaborated with notable colleagues, including Oguzhan Murat Onen and Ju Li, to further explore the potential of his inventions and enhance their practical applications.
Conclusion
Jesus Del Alamo's innovative work in CMOS-compatible protonic resistive devices showcases his expertise and commitment to advancing technology in the semiconductor field. His contributions continue to influence the development of next-generation memory and processing elements.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
