Sendai, Japan

Jeoung Chill Shim

This inventor holds 1 USPTO granted patent. Top assignee: Semiconductor Technology Academic Research Center. Active years: 2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeoung Chill Shim. Retrieved from https://idiyas.com/inventor/jeoung-chill-shim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Jeoung Chill Shim: Innovator in Semiconductor Technology

Introduction

Jeoung Chill Shim is a prominent inventor based in Sendai, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods in forming nickel-silicon compounds.

Latest Patents

Jeoung Chill Shim holds a patent for a nickel-silicon compound forming method, semiconductor device manufacturing method, and semiconductor device. This patent describes a process that involves forming nickel on at least one of only silicon and a compound containing silicon, followed by stepwise heating of the nickel together with the silicon or the silicon-containing compound. This innovative approach enhances the efficiency and effectiveness of semiconductor devices.

Career Highlights

Jeoung Chill Shim is affiliated with the Semiconductor Technology Academic Research Center, where he continues to advance research and development in semiconductor technologies. His work has been instrumental in improving manufacturing processes and device performance.

Collaborations

Some of his notable coworkers include Mitsumasa Koyanagi and Hiroyuki Kurino, who collaborate with him on various projects within the semiconductor field.

Conclusion

Jeoung Chill Shim's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the industry. His work continues to influence the development of more efficient semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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