Company Filing History:
Years Active: 1993-1994
Title: Jeonwook Yang: Innovator in GaAs Semiconductor Technology
Introduction
Jeonwook Yang is a prominent inventor based in Daejeon, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of Gallium Arsenide (GaAs) devices. With a total of 2 patents, Yang's work focuses on innovative manufacturing methods that enhance the performance of GaAs metal semiconductor field-effect transistors (FETs).
Latest Patents
Yang's latest patents include a manufacturing method of GaAs metal semiconductor FET. This method involves several steps, such as preparing a GaAs substrate, depositing a silicon layer, and forming photoresist patterns to define contact regions and channel regions. The process also includes injecting silicon ions into the substrate and forming ohmic contacts and gate electrodes. Another notable patent is the manufacturing method of a self-aligned GaAs FET using a refractory gate with a dual structure. This method enhances the gate's low-resistance and Schottky characteristics, contributing to improved device performance.
Career Highlights
Jeonwook Yang is affiliated with the Electronics and Telecommunications Research Institute, where he continues to push the boundaries of semiconductor technology. His innovative approaches have positioned him as a key figure in the research and development of advanced electronic components.
Collaborations
Yang has collaborated with notable colleagues, including Kyuhwan Shim and Chulsoon Park. Their combined expertise has fostered advancements in semiconductor research and development.
Conclusion
Jeonwook Yang's contributions to GaAs semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to pave the way for future innovations in electronics.