Suwon, South Korea

Jeonghyeon Wang

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeonghyeon Wang. Retrieved from https://idiyas.com/inventor/jeonghyeon-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jeonghyeon Wang and Substrate Analysis Technology.

Introduction

Jeonghyeon Wang is an inventor associated with Suwon, South Korea, and Samsung Electronics Co., Ltd. His listed patent focuses on analyzing patterned substrates through coordinated milling, depth measurement, and imaging.

Latest Patents

Wang is credited with 1 patent, titled “Substrate Analysis System.” The invention describes a system that loads a patterned substrate, mills away part of its pattern layer, measures the depth of the resulting analysis region, and captures a two-dimensional image of that region. A control module circulates the substrate among the milling, depth-measuring, and imaging modules when the measured milling depth is shallower than a target depth. The milling module adjusts the ion-beam path to scan horizontally according to a profile based on the beam’s intensity map.

Career Highlights

The available information associates Wang with Samsung Electronics Co., Ltd. and identifies his work on a system for substrate analysis. The patent combines material removal with depth measurement and imaging to support examination of patterned substrates.

Collaborations

Jonghyeok Park and Kwangrak Kim are listed as Wang’s coworkers. The provided information does not specify their roles or whether they collaborated on this patent.

Conclusion

Jeonghyeon Wang’s listed patent presents an integrated approach to substrate analysis, bringing ion-beam milling, depth measurement, and imaging together in a controlled process.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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