Jeong Mo Hwang

Title: Innovations of Jeong Mo Hwang

Introduction

Jeong Mo Hwang is a prominent inventor based in Taejeon-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of five patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of his latest patents is titled "Method for forming dual gate in DRAM embedded with a logic circuit." This method involves a series of steps to create a dual gate structure in a semiconductor device, which includes stacking a gate insulating film, a semiconductor layer, and a low resistance metal layer. The process also details the formation of gate patterns, sidewall spacers, and the implantation of impurity ions to create source and drain regions. Another notable patent is "Semiconductor device and method for fabricating the same," which addresses the reduction of the floating body effect in SOI MOSFETs. This invention includes the design of transistors with specific impurity ion implanting layers and carrier exhausting electrodes to improve device performance.

Career Highlights

Jeong Mo Hwang has worked with notable companies such as Hyundai Electronics Industries Co., Ltd. and Hyundai Electronics Inc. Co., Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Throughout his career, Jeong Mo Hwang has collaborated with talented individuals, including Jeong Hwan Son and Sung Kwon Hong. These collaborations have likely fostered a creative environment that has led to significant advancements in their respective fields.

Conclusion

Jeong Mo Hwang's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the industry. His work continues to influence the development of advanced semiconductor devices.