Busan, South Korea

Jeong-Hwan Jang


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2019-2022

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3 patents (USPTO):Explore Patents

Title: Jeong-Hwan Jang: Innovator in Semiconductor Technology

Introduction

Jeong-Hwan Jang is a prominent inventor based in Busan, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on innovative methods and structures that enhance the efficiency and functionality of semiconductor devices.

Latest Patents

Among his latest patents is a semiconductor stacking structure, which includes a monocrystalline substrate that is different from a nitride semiconductor. This structure features an inorganic thin film that defines a cavity between the film and the substrate. Notably, part of the inorganic thin film is crystallized to match the substrate's crystal structure. Additionally, a nitride semiconductor layer is grown from this crystallized inorganic thin film above the cavity. Another significant aspect of his work is the method and apparatus for separating a nitride semiconductor layer. This method involves mechanical separation techniques, which can include applying vertical or horizontal forces, as well as forces involving relative circular motion.

Career Highlights

Jeong-Hwan Jang has worked with notable organizations such as Samsung Electronics and Seoul National University. His experience in these prestigious institutions has allowed him to refine his expertise in semiconductor technologies and contribute to groundbreaking innovations.

Collaborations

Some of his notable coworkers include Eui-Joon Yoon and Dae-Young Moon. Their collaborative efforts have further advanced the research and development in semiconductor applications.

Conclusion

Jeong-Hwan Jang's contributions to semiconductor technology exemplify the spirit of innovation. His patents and career achievements reflect a commitment to advancing the field and improving the functionality of semiconductor devices.

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