Jeong Heo

Title: The Innovative Contributions of Jeong Heo

Introduction

Jeong Heo is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of materials science, particularly in the development of methods for growing gallium nitride (GaN) single crystals. His innovative approach has implications for various applications in electronics and optoelectronics.

Latest Patents

Jeong Heo holds a patent for a "Method for forming buffer layer for GaN single crystal." This patent describes a technique for creating a buffer layer that facilitates the growth of gallium nitride single crystals on a sapphire substrate using hydride vapor phase epitaxy (HVPE). The buffer layer is designed as a doped vertical GaN single crystal film with a nanoporosity of 0.10 to 0.15 μm. This innovative method reduces tensile stress caused by the thermal expansion coefficient differences between gallium nitride and the sapphire substrate. It allows for the growth of the GaN layer to a thickness ranging from 1 micrometer (μm) to several millimeters (mm) without inducing cracks, thereby enhancing the crystallinity of the material.

Career Highlights

Jeong Heo is associated with Grand Tech Co., Ltd., where he continues to advance his research and development efforts. His work has positioned him as a key figure in the field of semiconductor materials, contributing to the ongoing evolution of technology in this area.

Collaborations

Jeong Heo collaborates with notable colleagues, including Kyung Seob Han and Hyeong Jun Kim. Their combined expertise fosters an environment of innovation and progress within their projects.

Conclusion

Jeong Heo's contributions to the field of gallium nitride single crystal growth exemplify the impact of innovative thinking in technology. His patent and ongoing work at Grand Tech Co., Ltd. highlight the importance of advancements in materials science for future applications.