The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
May. 01, 2009
Kyung Seob Han, Gunpo-si, KR;
Jeong Heo, Suwon-si, KR;
Hyeong Jun Kim, Seoul, KR;
Seung Kil Lee, Wonju-si, KR;
Kyung Seob Han, Gunpo-si, KR;
Jeong Heo, Suwon-si, KR;
Hyeong Jun Kim, Seoul, KR;
Seung Kil Lee, Wonju-si, KR;
Grand Tech Co., Ltd, Siheung-Si, Gyeonggi-Do, KR;
Abstract
Disclosed is a method for forming a buffer layer for growing gallium nitride single crystals on a sapphire substrate using hydride vapor phase epitaxy (HVPE), wherein the buffer layer is formed in the form of a doped vertical gallium nitride (GaN) single crystal film with a nanoporosity of 0.10 to 0.15 μm on the sapphire substrate by reacting HCl and NHas a Group III/V mix gas. The nanoporous buffer layer interposed on the interface between the sapphire substrate and gallium nitride reduces tensile stress generated by the difference in thermal expansion coefficient between gallium nitride and the sapphire substrate, enables growth of the gallium nitride layer to a thickness of 1 micrometer (μm) to several millimeters (mm) without causing cracks, and reduces the lattice constant difference to improve crystallinity.