Franklin Lakes, NJ, United States of America

Jeoffrey Mott

This inventor holds 1 USPTO granted patent. Top assignee: Optical Information Systems, Inc.. Active years: 1984.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeoffrey Mott. Retrieved from https://idiyas.com/inventor/jeoffrey-mott

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 1984

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1 patent (USPTO):Explore Patents

Title: Jeoffrey Mott: Innovator in Semiconductor Technology

Introduction

Jeoffrey Mott is a notable inventor based in Franklin Lakes, NJ (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to bonding pad metallization.

Latest Patents

Mott holds a patent for "Bonding pad metallization for semiconductor devices." This invention is specifically directed towards stress-sensitive semiconductor devices, such as semiconductor lasers. A key advantage of his invention is the incorporation of a diffusion barrier layer, which effectively inhibits the migration of conventional bonding materials like indium solder.

Career Highlights

Jeoffrey Mott is associated with Optical Information Systems, Inc., where he applies his expertise in semiconductor technology. His work has contributed to advancements in the reliability and performance of semiconductor devices.

Collaborations

Mott collaborates with fellow inventor Srinivas T Rao, enhancing the innovative capabilities within their field.

Conclusion

Jeoffrey Mott's contributions to semiconductor technology through his patent demonstrate his commitment to innovation and excellence in the industry. His work continues to influence the development of advanced semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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