Jens Haetty

Title: Innovations of Inventor Jens Haetty

Introduction

Jens Haetty is a notable inventor based in Lagrangeville, NY (US). He has made significant contributions to the field of memory technology, particularly in the design of static random access memory (SRAM) bitcells. With a total of 2 patents, his work has advanced the efficiency and stability of memory circuits.

Latest Patents

Haetty's latest patents include innovative designs for SRAM bitcells. One of his patents focuses on a technique related to a circuit that incorporates at least one 4 transistor (4T) static random access memory (SRAM) bitcell. This design features a first PFET and a first NFET coupled to form a first output node, along with a second PFET and a second NFET forming a second output node. A pulldown circuit is connected to the first NFET, which is operable to pull down the voltage at the first output node. Additionally, a feedback circuit monitors the first output node and controls the pulldown circuit.

Another patent by Haetty presents an ultra-dense and stable 4T SRAM cell design that includes NFETs and PFETs. In this design, two NFETs are cross-coupled with two PFETs, with the NFETs connected directly to a word line. The PFETs are separately connected to ground, enhancing the overall performance of the SRAM device.

Career Highlights

Jens Haetty is currently employed at International Business Machines Corporation (IBM), where he continues to innovate in the field of memory technology. His work has been instrumental in developing advanced memory solutions that meet the demands of modern computing.

Collaborations

Throughout his career, Haetty has collaborated with esteemed colleagues, including Myung-Hee Na and Robert C Wong. These partnerships have fostered a creative environment that has led to groundbreaking advancements in SRAM technology.

Conclusion

Jens Haetty's contributions to the field of memory technology through his innovative patents and collaborations highlight his role as a significant inventor. His work continues to influence the development of efficient and stable memory solutions in the industry.