Jenn-Hwa Huang

Title: Innovator Spotlight: Jenn-Hwa Huang

Introduction

Jenn-Hwa Huang is a prominent inventor based in Chandler, AZ (US). She has made significant contributions to the field of semiconductor technology. Her innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Jenn-Hwa Huang holds a patent for a semiconductor device with selectively etched surface passivation. This invention includes a semiconductor substrate designed to incorporate a channel, along with first and second ohmic contacts that facilitate current flow. The device features first and second dielectric layers, with specific configurations that enhance its functionality. The second dielectric layer is particularly noteworthy as it is made from a wet etchable material that exhibits etch selectivity to a dry etchant of the first dielectric layer.

Career Highlights

Jenn-Hwa Huang is currently employed at NXP USA, Inc., where she continues to push the boundaries of semiconductor innovation. Her work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations

Throughout her career, Jenn-Hwa has collaborated with notable colleagues, including Bruce McRae Green and Darrell Glenn Hill. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Jenn-Hwa Huang is a trailblazer in the semiconductor industry, with her patent showcasing her expertise and innovative spirit. Her contributions continue to shape the future of technology, making her a key figure in the field.