Jeng-Huang Yang

Title: Jeng-Huang Yang: Innovator in Semiconductor Manufacturing

Introduction

Jeng-Huang Yang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent.

Latest Patents

Yang holds a patent titled "Method of manufacturing self-aligned contact openings." This patent describes a method that involves providing a substrate with multiple device structures, where the tops of these structures are elevated above the substrate's surface. The process includes forming a first dielectric layer and a conductive layer on the substrate and device structures. Subsequently, parts of the conductive layers are removed, and first spacers are created on the exposed sidewalls of the device structures. The exposed conductive layer and first dielectric layer are then removed using the first spacer as a mask, exposing the substrate. Finally, conductive spacers and second spacers are formed on the sidewalls of the conductive spacers.

Career Highlights

Jeng-Huang Yang is associated with Powerchip Semiconductor Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing manufacturing techniques within the industry.

Collaborations

Yang collaborates with notable colleagues, including Pin-Yao Wang and Liang-Chuan Lai, contributing to various projects and innovations in semiconductor manufacturing.

Conclusion

Jeng-Huang Yang's contributions to semiconductor manufacturing through his innovative patent demonstrate his expertise and commitment to advancing technology in this field. His work continues to influence the industry positively.