Jen-Wu Huang

Title: Jen-Wu Huang and Thin Multi-Well Active-Layer LED Technology.

Introduction

Jen-Wu Huang is an inventor based in Santa Clara, California, whose work includes semiconductor light-emitting diode technology. His listed patent describes controlled oxygen doping in LEDs to improve reliability while limiting any reduction in light output. Huang is associated with Lumileds Lighting U.S., LLC.

Latest Patents

Huang’s listed patent, “Thin Multi-Well Active Layer LED with Controlled Oxygen Doping,” concerns an LED and a fabrication method that regulate oxygen dopant concentration according to the device’s dominant emission wavelength. The patent describes using higher oxygen concentrations for LEDs designed to emit at longer wavelengths, linking the doping level to the active-layer composition.

In an exemplary AlGaInP LED structure, the device may include a substrate, confining layers, an active region, and optional reflector, set-back, and window layers. The active region can contain multiple thin active layers separated by barrier layers. The patent also describes controlled oxygen doping in p-type layers and the use of p-type dopants such as magnesium, zinc, carbon, or beryllium.

Huang is credited with 1 patent in the information provided.

Career Highlights

The patent reflects work on LED layer design, dopant control, and fabrication. Its approach aims to balance device reliability with light output by tailoring oxygen doping to the LED’s emission characteristics.

Collaborations

Huang’s listed coworkers include Stephen Andrew Stockman and Eugene I. Chen. The provided information does not specify their roles in the patent or their working relationship with Huang.

Conclusion

Jen-Wu Huang’s listed invention focuses on controlled oxygen doping in thin multi-well LED structures, with the goal of improving reliability while preserving light output.