Jen Hung Wang

Title: Innovations by Inventor Jen Hung Wang

Introduction

Jen Hung Wang is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique patent that enhances the performance of semiconductor devices.

Latest Patents

One of Jen Hung Wang's key patents is titled "Interconnect structure with dielectric cap layer and etch stop layer stack." This patent describes a method of forming a semiconductor device that includes several steps. It involves forming a first conductive feature in a first dielectric layer over a substrate. Additionally, a metal cap layer is formed over the upper surface of the first conductive feature, which is distal from the substrate. A dielectric cap layer is selectively formed over the upper surface of the first dielectric layer, laterally adjacent to the metal cap layer, exposing the metal cap layer. Finally, an etch stop layer stack is formed over both the metal cap layer and the dielectric cap layer, comprising multiple etch stop layers. This innovation is crucial for improving the efficiency and reliability of semiconductor devices.

Career Highlights

Jen Hung Wang is currently employed at Taiwan Semiconductor Manufacturing Co., Ltd. His work at this leading semiconductor company has allowed him to collaborate with some of the brightest minds in the industry. His contributions have been instrumental in advancing semiconductor technology.

Collaborations

One of his notable coworkers is Chao-Chun Wang. Their collaboration has likely fostered innovative ideas and solutions within their projects.

Conclusion

Jen Hung Wang's contributions to semiconductor technology through his patent and work at Taiwan Semiconductor Manufacturing Co., Ltd. highlight his role as an influential inventor in the field. His innovative methods continue to shape the future of semiconductor devices.