Company Filing History:
Years Active: 2003
Title: Innovations of Inventor Jen-Hung Larn
Introduction
Jen-Hung Larn is a notable inventor based in Taipei Hsien, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method that addresses critical challenges in the industry.
Latest Patents
One of Jen-Hung Larn's key patents is titled "Method of preventing silicide spiking." This invention involves the formation of a polysilicon layer on a semiconductor substrate, followed by a collimator physical vapor deposition (PVD) process to create a titanium nitride layer on the polysilicon layer. A rapid thermal nitridation (RTN) process is then performed to enhance the structure of the titanium nitride layer. Finally, a silicide layer is formed on the barrier layer. This method effectively prevents the occurrence of spikes at the interface between the silicide layer and the polysilicon layer by utilizing the titanium nitride layer. Jen-Hung Larn holds 1 patent.
Career Highlights
Jen-Hung Larn is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work has been instrumental in advancing technologies that improve the performance and reliability of semiconductor devices.
Collaborations
Throughout his career, Jen-Hung Larn has collaborated with talented individuals such as Wan-Jeng Lin and Yung-Chung Lin. These collaborations have fostered innovation and contributed to the success of various projects.
Conclusion
Jen-Hung Larn's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the industry positively.