Round Rock, TX, United States of America

Jeffrey W Metz


Average Co-Inventor Count = 6.0

ph-index = 2

Forward Citations = 98(Granted Patents)


Company Filing History:


Years Active: 2005-2007

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2 patents (USPTO):Explore Patents

Title: Innovations of Jeffrey W Metz

Introduction

Jeffrey W Metz is an accomplished inventor based in Round Rock, TX (US). He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on improving the reliability and efficiency of semiconductor devices.

Latest Patents

One of his latest patents is titled "Semiconductor device having a bond pad and method therefor." This invention features a bond pad that includes a probe region and a wire bond region that are substantially non-overlapping. In one embodiment, the bond pad is connected to a final metal layer pad and extends over an interconnect region. The bond pad is formed from aluminum, while the final metal layer pad is made from copper. This design prevents damage to the final metal layer pad during probe testing, thereby enhancing the reliability of wire bonds. Additionally, in applications requiring very fine pitch between bond pads, the probe regions and wire bond regions of multiple bond pads can be staggered to increase the distance between them. This innovation also reduces the size of the integrated circuit by forming the bond pads over the interconnect region.

Career Highlights

Jeffrey W Metz is currently employed at Freescale Semiconductor, Inc., where he continues to develop cutting-edge technologies in the semiconductor industry. His expertise and innovative mindset have made him a valuable asset to his team.

Collaborations

Some of his notable coworkers include Lois E Yong and Peter R Harper, who contribute to the collaborative environment at Freescale Semiconductor, Inc.

Conclusion

Jeffrey W Metz's contributions to semiconductor technology through his patents demonstrate his commitment to innovation and excellence in the field. His work not only enhances the reliability of semiconductor devices but also paves the way for future advancements in technology.

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