Jeffrey S Cope

Title: Inventor Spotlight: Jeffrey S. Cope of Austin, TX

Introduction

Jeffrey S. Cope, based in Austin, Texas, is a prominent inventor recognized for his contributions to semiconductor technology. With a focus on innovations in MOS transistor design, his work stands as a testament to the advancement of electronic components that power modern devices.

Latest Patents

Jeffrey S. Cope holds a patent for a method of forming an MOS transistor featuring a metallic gate electrode. The patented method outlines the steps for creating a metal gate MOS transistor. This begins with the formation of source and drain electrodes within a substrate, which are self-aligned to a lithographically-patterned feature. Following this, the features are filled with a metallic gate layer that is polished to create a metallic plug region. This innovation promises to improve the performance and efficiency of semiconductor devices.

Career Highlights

Cope has dedicated his career to the field of semiconductor technology, working at Motorola Corporation, a leader in communications and electronic systems. His expertise in transistor design has contributed to the ongoing evolution of technology within the industry.

Collaborations

Throughout his career, Jeffrey S. Cope has collaborated with notable coworkers such as Veena Misra and Suresh Venkatesan. These partnerships highlight the collaborative spirit present in research and innovation within technology firms, allowing for the exchange of ideas and the enhancement of innovative practices.

Conclusion

In summary, Jeffrey S. Cope is a skilled inventor whose work has marked significant advancements in the field of semiconductor technology. His patent for a method of forming a metal gate MOS transistor exemplifies his commitment to innovation. As technology continues to evolve, the contributions of inventors like Cope remain crucial for progress in the electronics industry.