Jeffrey Quast

Title: The Innovations of Jeffrey Quast

Introduction

Jeffrey Quast is an accomplished inventor based in Bay City, MI (US). He holds two patents that showcase his expertise in the field of silicon carbide (SiC) wafer manufacturing. His work is significant in advancing technologies related to power devices.

Latest Patents

One of Jeffrey Quast's latest patents is a method for manufacturing SiC wafers that are suitable for integration with power device manufacturing technology. This method involves producing silicon carbide substrates that can be processed in standard epitaxial chambers typically used for silicon wafers. The substrates must meet strict limitations to avoid contamination, ensuring the integrity of the silicon wafers. To optimize the use of standard silicon processing equipment, the SiC substrates are designed with a diameter of at least 150 mm. Additionally, the growth crucible used for the SiC boule is engineered to have an interior volume six to twelve times the final growth volume, with a height-to-width ratio of 0.8 to 4.0. These specifications are crucial for minimizing contamination, particles, and defects in each substrate.

Career Highlights

Throughout his career, Jeffrey Quast has worked with notable companies such as Dow Silicones Corporation and Dow Corning Corporation. His experience in these organizations has contributed to his innovative approaches in the field of semiconductor manufacturing.

Collaborations

Some of his coworkers include Darren Hansen and Mark Jon Loboda, who have collaborated with him on various projects.

Conclusion

Jeffrey Quast's contributions to the field of silicon carbide wafer manufacturing highlight his innovative spirit and dedication to advancing technology. His patents reflect a commitment to quality and precision in semiconductor processing.