Basking Ridge, NJ, United States of America

Jeffrey P Donlan


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 1984

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1 patent (USPTO):Explore Patents

Title: Innovations by Jeffrey P. Donlan: A Pioneer in Semiconductor Doping Compositions

Introduction

Jeffrey P. Donlan is an accomplished inventor based in Basking Ridge, New Jersey. With a keen focus on semiconductor technologies, he has made significant contributions to the field through his innovative work on doping compositions that enhance semiconductor performance. His expertise lies in developing stable suspensions of various dopant materials, which play a crucial role in semiconductor manufacturing.

Latest Patents

Jeffrey P. Donlan holds one patent that stands out for its potential impact on the semiconductor industry. The patent addresses the development of stable suspensions of boron, phosphorus, antimony, and arsenic dopants. Specifically, the invention details semiconductor doping compositions comprising finely divided spherical particles that ensure optimal doping efficiency. The use of a thermally degradable polymeric organic binder, such as polymethyl methacrylate, combined with an organic solvent like cyclohexanone, promotes the effective dispersion of dopant materials. This innovation aims to produce semiconductor materials with a wide range of sheet resistances and junction depths, while also offering better moisture resistance and reduced chemical degradation.

Career Highlights

Throughout his career, Donlan's contributions have been primarily with Allied Corporation, where he has worked on advancing semiconductor technologies. His focus on improving dopant materials has enhanced not only the production processes but also the reliability of semiconductor devices. By addressing issues like moisture sensitivity and chemical degradation, his work demonstrates a forward-thinking approach essential in today’s fast-paced tech environment.

Collaborations

Collaboration has been a key aspect of Donlan's career. He has worked alongside notable colleagues such as Arunava Gupta and Gary A. West. Together, they have forged a path towards creating innovative solutions in the semiconductor sector. Their combined efforts have fostered an environment of creativity and technical advancement that is critical for ongoing innovation.

Conclusion

Jeffrey P. Donlan's contributions to semiconductor doping technologies exemplify the importance of innovation in enhancing material performance. Through his patent for stable suspensions of dopants, he has addressed key challenges in the industry, paving the way for the next generation of semiconductor devices. As the technological landscape continues to evolve, Donlan’s work remains pivotal in shaping the future of semiconductor manufacturing and application.

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