Allied Corporation

Jeffrey P Donlan

Gary A West

Arunava Gupta

Semiconductor doping compositions comprising a suspension of (a) a dopant material, in the form of finely divided spherical particles of narrow size distribution from about 0.1 D to D, where D is the diameter of the largest particle and is no more than about (1.mu.) comprising a member selected from the group consisting of B.sub.x Si.sub.y, B.sub.x N.sub.y, P.sub.x Si.sub.y, P.sub.x N.sub.y, As.sub.x Si.sub.y and Sb.sub.x Si.sub.y wherein x and y vary from about 0.001 to about 99.999 mole percent, (b) an effective amount of a thermally degradable polymeric organic binder such as polymethyl methacrylate; and (c) an amount of an organic solvent, such a cyclohexanone, sufficient to dissolve said polymeric organic binder, such as polymethylmethacrylate, and to disperse said dopant material are disclosed. Three diffusion processes using the semiconductor doping compositions of the present invention for preparation of semiconductor materials having a wide range of sheet resistances and junction depths are also disclosed. The dopant materials selected for the semiconductor compositions of the present invention are less sensitive to moisture and chemical degradation and thereby afford greater processing latitude, are more reproducible and are less prone to create damage to and/or staining of the semiconductor substrate.

Growing community of inventors

Basking Ridge, NJ, United States of America

Jeffrey P Donlan