Company Filing History:
Years Active: 2011-2014
Title: Innovations of Jean-Marc Beaujour
Introduction
Jean-Marc Beaujour is a notable inventor based in Elmhurst, NY (US). He has made significant contributions to the field of magnetic devices, particularly in the development of high-speed, low-power methods for controlling magnetization in memory cells. With a total of 3 patents to his name, his work has implications for advancements in memory technology.
Latest Patents
One of his latest patents focuses on "High speed low power magnetic devices based on current induced spin-momentum transfer." This invention presents a method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device. The device is designed for memory cells and utilizes spin-polarized electrical current. It comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction, alongside a free magnetic layer with a changeable magnetic helicity and/or magnetization direction. The two layers are separated by a non-magnetic layer, allowing for effective manipulation of the magnetic state. A current applied to the device induces a torque that alters its magnetic state, enabling it to function as a magnetic memory for writing information. The resistance of the device, which varies with its magnetic state, is measured to read out the stored information.
Career Highlights
Jean-Marc Beaujour is affiliated with New York University, where he continues to innovate and contribute to research in magnetic devices. His work is characterized by a focus on efficiency and speed, which are critical factors in modern memory technology.
Collaborations
He has collaborated with notable colleagues such as Andrew David Kent and Daniel L Stein, further enhancing the impact of his research through teamwork and shared expertise.
Conclusion
Jean-Marc Beaujour's contributions to the field of magnetic devices exemplify the innovative spirit of modern inventors. His patents reflect a commitment to advancing technology in memory systems, showcasing the potential for future developments in this area.