Suwon, South Korea

Jea-Myung Baek

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jea-Myung Baek. Retrieved from https://idiyas.com/inventor/jea-myung-baek

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Jea-Myung Baek: Innovator in Photodiode Technology

Introduction

Jea-Myung Baek is a prominent inventor based in Suwon, South Korea. He is known for his contributions to the field of photodiode technology. His innovative work has led to the development of a unique photodiode detector that enhances performance in various applications.

Latest Patents

Baek holds a patent for a photodiode detector and its fabrication method. The patent describes a photodiode detector that includes an InP substrate, a u-In Ga As layer, and a u-Inp layer, among other components. The design incorporates a SiNx insulation layer and an additional insulation layer to achieve the desired capacitance. This invention aims to improve the efficiency and functionality of photodiode detectors.

Career Highlights

Jea-Myung Baek is currently employed at Samsung Electronics Co., Ltd. His work at this leading technology company has allowed him to focus on advancing photodiode technology. Baek's dedication to innovation has positioned him as a key figure in his field.

Collaborations

Baek has collaborated with Seung-Kee Yang, contributing to the development of cutting-edge technologies in photodiode applications. Their partnership has fostered advancements that benefit the industry.

Conclusion

Jea-Myung Baek's contributions to photodiode technology exemplify his commitment to innovation. His patent and work at Samsung Electronics Co., Ltd. highlight his role as a significant inventor in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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