Boise, ID, United States of America

Jason E Graalum


Average Co-Inventor Count = 4.0

ph-index = 6

Forward Citations = 115(Granted Patents)


Company Filing History:


Years Active: 1997-2005

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14 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Jason E Graalum

Introduction

Jason E Graalum is a notable inventor based in Boise, ID (US), recognized for his significant contributions to semiconductor technology. With a total of 14 patents to his name, Graalum has made strides in enhancing the efficiency and reliability of programming antifuse elements in semiconductor memory.

Latest Patents

Among his latest patents, Graalum has developed a circuit for programming antifuse bits. This innovative circuitry allows for the simultaneous programming of all antifuse elements in a bank, significantly improving the speed of the programming process. One embodiment of his invention includes a feedback circuit that halts the current flow through an antifuse element once it is programmed. Additionally, he has devised a method for verifying the integrity of unprogrammed antifuses, which involves connecting the antifuse in series with a node and detecting voltage changes to determine if the antifuse is leaky. Another method he has patented ensures that antifuses are programmed correctly by monitoring voltage levels during the programming process.

Career Highlights

Graalum is currently employed at Micron Technology Incorporated, a leading company in semiconductor manufacturing. His work at Micron has allowed him to apply his innovative ideas in a practical setting, contributing to advancements in memory technology.

Collaborations

Throughout his career, Graalum has collaborated with talented individuals such as Daryl L Habersetzer and Casey R Kurth. These collaborations have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Jason E Graalum's contributions to the field of semiconductor technology are noteworthy and impactful. His innovative patents and collaborative efforts continue to shape the future of programming antifuse elements in memory devices.

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