Ottawa, Canada

Jason Ackert

This inventor holds 1 USPTO granted patent. Top assignee: Lumentum Technology UK Limited. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jason Ackert. Retrieved from https://idiyas.com/inventor/jason-ackert

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jason Ackert and High-Power Photodiode Innovation.

Introduction

Jason Ackert is an inventor associated with Ottawa, Canada, and Lumentum Technology UK Limited. His patent work includes a high-power photodiode design that combines semiconductor materials and carefully positioned ion-implantation regions.

Latest Patents

Ackert is credited with 1 patent, titled “High power photodiode.” The invention describes a photodiode with a waveguide layer made from a first semiconductor material and a mesa made from a second semiconductor material. One ion-implantation region in the waveguide layer is set back from part of the mesa’s bottom edge, while another region extends from the mesa’s top surface down a portion of its sloped sidewall to that edge. These structural and doping features define the device’s semiconductor configuration.

Career Highlights

Ackert’s listed patent reflects work on photodiode architecture, an area relevant to optoelectronic devices. His association with Lumentum Technology UK Limited connects his inventive work with a company operating in the photonics and optical-technology sector.

Collaborations

Chengkun Chen and Marcel G. Boudreau are identified as Ackert’s coworkers. The available information does not specify their roles in the patent or whether they collaborated directly on the invention.

Conclusion

Jason Ackert’s “High power photodiode” patent documents his contribution to photodiode design through a layered semiconductor structure and strategically placed implantation regions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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