This inventor holds 1 USPTO granted patent. Top assignee: US Government as Represented by the Secretary of the Army. Active years: 1978.
Company Filing History:
Years Active: 1978
Title: Jarda L Caslavsky: Innovator in Crystal Growth Technology
Introduction
Jarda L Caslavsky is a notable inventor based in Lexington, MA (US). He has made significant contributions to the field of materials science, particularly in the production of single crystals. His innovative methods have implications for various applications in technology and industry.
Latest Patents
Jarda L Caslavsky holds a patent for a method titled "Method of orienting seed crystals in a melt, and product obtained thereby." This patent describes a technique for producing improved, transparent single crystals with a corundum structure. The method involves optimizing the orientation of growth planes of a seed crystal in a melt, which is crucial for minimizing thermal strain during the crystallization process.
Career Highlights
Caslavsky is currently employed by the US Government as represented by the Secretary of the Army. His work focuses on advancing technologies that enhance the quality and efficiency of crystal growth processes. His expertise in this area has positioned him as a valuable asset in research and development initiatives.
Collaborations
Throughout his career, Jarda has collaborated with esteemed colleagues, including Dennis J Viechnicki and Charles P Gazzara. These partnerships have fostered innovation and contributed to the advancement of crystal growth technologies.
Conclusion
Jarda L Caslavsky's contributions to the field of crystal growth are noteworthy, and his patented methods continue to influence advancements in materials science. His work exemplifies the importance of innovation in developing new technologies.