Dexter, MI, United States of America

Janis A Valdmanis


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Janis A. Valdmanis: Innovator in Semiconductor Technology

Introduction

Janis A. Valdmanis is a notable inventor based in Dexter, MI (US). She has made significant contributions to the field of semiconductor technology, particularly in the development of photodiodes. Her innovative work has led to the granting of a patent that showcases her expertise and creativity in this specialized area.

Latest Patents

Janis holds a patent for a "Highly-doped P-type contact for high-speed, front-side illuminated photodiode." This invention involves a semiconductor p-i-n photodiode that includes a substrate, an n layer coupled to the surface of the substrate, an i layer coupled to the surface of the n layer, and a carbon-doped p layer coupled to the surface of the i layer. This advancement is crucial for enhancing the performance of photodiodes in various applications.

Career Highlights

Janis is currently employed at Picometrix, Inc., where she continues to push the boundaries of semiconductor technology. Her role at the company allows her to collaborate with other talented professionals in the field, contributing to innovative projects and research.

Collaborations

Janis has worked alongside esteemed colleagues such as Steven L. Williamson and Robert N. Sacks. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Janis A. Valdmanis is a pioneering inventor whose work in semiconductor technology has made a lasting impact. Her patent and contributions to Picometrix, Inc. highlight her dedication to innovation and excellence in her field.

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