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Years Active: 2021-2024
Title: Jangheon Kim: Innovator in Radio Frequency Transistor Amplifiers
Introduction
Jangheon Kim is a notable inventor based in Chandler, AZ (US). He has made significant contributions to the field of radio frequency technology, holding a total of 4 patents. His work focuses on advancements in Group III nitride-based RF transistor amplifiers, which are crucial for various electronic applications.
Latest Patents
Among his latest patents, Jangheon Kim has developed innovative RF transistor amplifiers that include a Group III nitride-based RF transistor amplifier die. This technology features a semiconductor layer structure, a conductive source via connected to a source region, and an additional conductive via extending through the semiconductor layer structure. The design allows for enhanced connectivity, with one end of the additional conductive via connected to an external circuit and the other end linked to a matching circuit. This advancement is pivotal for improving the performance and efficiency of RF amplifiers.
Career Highlights
Throughout his career, Jangheon Kim has worked with prominent companies in the semiconductor industry, including Wolfspeed, Inc. and Cree GmbH. His experience in these organizations has allowed him to refine his expertise in RF technology and contribute to groundbreaking innovations.
Collaborations
Jangheon has collaborated with esteemed colleagues such as Michael E. Watts and Basim H. Noori. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in technology.
Conclusion
Jangheon Kim's contributions to the field of radio frequency technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry positively, paving the way for future innovations in RF transistor amplifiers.