Gyeonggi-do, South Korea

Jang Seung Jun

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Enjet Co. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jang Seung Jun. Retrieved from https://idiyas.com/inventor/jang-seung-jun

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jang Seung Jun: Innovator in 3D Conductive Patterns

Introduction

Jang Seung Jun is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of conductive materials, particularly through his innovative methods of forming conductive patterns.

Latest Patents

Jang Seung Jun holds a patent for a "Method of forming a 3D conformal conductive pattern." This patent describes a technique for creating a conductive pattern by printing conductive ink on a substrate with a three-dimensional surface. The process involves several steps, including the mounting of the substrate, the injection of conductive ink using a nozzle while applying an electric field, and the curing of the injected pattern into a durable conductive form.

Career Highlights

Jang Seung Jun is currently employed at Enjet Co. Ltd., where he continues to develop and refine his innovative techniques. His work has positioned him as a key figure in the advancement of conductive materials technology.

Collaborations

He collaborates with fellow innovator Won-il Son, contributing to the development of cutting-edge solutions in their field.

Conclusion

Jang Seung Jun's work in the realm of 3D conductive patterns showcases his dedication to innovation and technology. His contributions are paving the way for advancements in conductive materials, making a significant impact in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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