Cheonan, South Korea

Jang-Seob Choi

This inventor holds 1 USPTO granted patent. Top assignee: Semes Co., Ltd.. Active years: 2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jang-Seob Choi. Retrieved from https://idiyas.com/inventor/jang-seob-choi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 19(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: Innovations by Jang-Seob Choi

Introduction

Jang-Seob Choi is a notable inventor based in Cheonan-si, South Korea. He has made significant contributions to the field of substrate treatment technology. His innovative approach has led to the development of a unique apparatus that enhances the etching process of wafers.

Latest Patents

Jang-Seob Choi holds a patent for an "Apparatus for treating substrate." This invention is designed to etch the top edge and bottom of a wafer effectively. The apparatus features a substrate support part that holds the wafer in place and a movable protect part that prevents etching fluid from contaminating non-etch portions of the wafer. The etching process utilizes both wet and dry etching techniques to achieve precise results.

Career Highlights

Choi is currently employed at Semes Co., Ltd., where he continues to innovate in the field of semiconductor manufacturing. His work has been instrumental in improving the efficiency and accuracy of wafer processing.

Collaborations

Some of his coworkers include In-Jun Kim and Jung-Keun Cho, who contribute to the collaborative environment at Semes Co., Ltd. Their teamwork fosters innovation and drives advancements in technology.

Conclusion

Jang-Seob Choi's contributions to substrate treatment technology exemplify the impact of innovative thinking in the semiconductor industry. His patent reflects a commitment to enhancing manufacturing processes, showcasing the importance of invention in modern technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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