Hwaseong, South Korea

Jang Ryul Park

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jang Ryul Park. Retrieved from https://idiyas.com/inventor/jang-ryul-park-9yae5kec

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Jang Ryul Park: Innovator in Semiconductor Technology

Introduction

Jang Ryul Park is a notable inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Jang Ryul Park holds a patent for an "Apparatus for inspecting substrate and method for fabricating semiconductor device using the same." This invention provides a method for fabricating a semiconductor device that includes several steps. The process involves loading a substrate onto a stage of an inspection apparatus, extracting light of a specific wavelength, and acquiring position information on focal points formed on the substrate. The method further includes adjusting the position of an objective lens or microsphere and inspecting the substrate using the condensed light.

Career Highlights

Jang Ryul Park is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work focuses on advancing semiconductor fabrication techniques, which are crucial for the development of modern electronic devices.

Collaborations

He collaborates with talented coworkers, including Soon Yang Kwon and Kwang Rak Kim, who contribute to the innovative environment at Samsung Electronics.

Conclusion

Jang Ryul Park's contributions to semiconductor technology through his patent demonstrate his expertise and commitment to innovation. His work continues to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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